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High purity GaAs and Al_xGa_1-x grown by metalorganic molecular beam epitaxyFURUHATA, N; OKAMOTO, A; HOSHINO, H et al.Journal of crystal growth. 1990, Vol 102, Num 4, pp 814-818, issn 0022-0248Article

Critère statistique de détermination de la température d'épitaxie par condensation d'un faisceau moléculaireBUDREVICH, A. G; LYUTOVICH, A. S; OKSENGENDLER, B. L et al.Kristallografiâ. 1989, Vol 34, Num 5, pp 1321-1322, issn 0023-4761Article

Hydrogen surface coverage: raising the silicon epitaxial growth temperatureWOLFF, S. H; WAGNER, S; BEAN, J. C et al.Applied physics letters. 1989, Vol 55, Num 19, pp 2017-2019, issn 0003-6951, 3 p.Article

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